photo ic for laser beam synchronous detection low voltage operation (3.3 v) s10317 series s11257 series www.hamamatsu.com 1 low voltage operation (3.3 v) high sensitivity current ampli er gain: 20 times (s10317, s11257-02dt) 6 times (s10317-01, s11257-01dt) digital output small package suitable for lead-free solder re ow photosensitive area: 2.84 0.5 mm (s10317 series) 2.84 0.25 mm (s11257 series) print start timing detection for laser printers, digital copiers, fax machines, etc. absolute maximum ratings parameter symbol condition value unit supply voltage vcc ta=25 c -0.5 to +7 v power dissipation * 1 p ta=25 c 300 mw output voltage * 2 vo ta=25 c -0.5 to +7 v output current io ta=25 c 5 ma ro terminal current i ro ta=25 c 3ma operating temperature topr -25 to +80 c storage temperature tstg -40 to +85 c re ow soldering conditions * 3 tsol peak temperature 240 c, 1 time - * 1: power dissipation decreases at a rate of 4 mw/c above ta=25 c. * 2: vcc=+0.5 v or less * 3: jedec level 5a note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. the s10317/s11257 series photo ic use a high-speed pin photodiode designed for laser beam synchronous detec- tion. they operate at a low voltage (3.3 v) compatible with low-voltage peripheral components mounted on the same pc board. two types of current ampli ers are available with a gain of 6 times (s10317-01, s11257-01dt) and 20 times (s10317, s11257-02dt) that can be selected according to laser power to be used. hamamatsu also provides a 5 v op- eration type (s9703 series) and dual-element si pin photodiode types (s9684 series, s11282-01ds). features applications
photo ic for laser beam synchronous detection s10317/s11257 series 2 electrical and optical characteristics (ta=25 c, =780 nm, vcc=3.3 v, ro=5.1 k , light incident angle=normal line direction 0, unless otherwise noted) parameter symbol condition min. typ. max. unit current consumption icc no input - 0.7 1.5 ma high level output voltage v oh i oh =4 ma 2.9 - - v low level output voltage v ol i ol =4 ma * 4 - - 0.3 v threshold input power s10317, s11257-02dt p th 14 19 24 w s10317-01, s11257-01dt 49.5 62 74.5 h l propagation delay time s10317, s11257-02dt t phl p i =57 w (s10317, s11257-02dt) p i =186 w (s10317-01, s11257-01dt) duty ratio 1:1 c l =15 pf * 5 - 130 250 ns s10317-01, s11257-01dt - 100 200 l h propagation delay time s10317, s11257-02dt t plh - 200 300 s10317-01, s11257-01dt - 150 250 rise time tr - 4 7 ns fall time tf - 4 7 ns maximum input power p i max. - - p th 8 w * 4: input power p i =57 w (s10317, s11257-02dt), 186 w (s10317-01, s11257-01dt) * 5: measured with a pulse-driven laser diode. input light-pulse rise time and fall times are 1 ns or less. spectral response wavelength (nm) 0 0.5 0.3 0.2 0.1 photosensitivity (a/w) 0.4 (typ. ta=25 c) 200 400 600 800 1000 1200 50% input light level output 100% 0% 90% 1.5 v 10% t phl tf tr t plh kpicc0112ea kpicb0166ea
photo ic for laser beam synchronous detection s10317/s11257 series vcc 0.1 f 3.3 v current amplifier external gain resistance ro vo ro photodiode vref gnd 3 kpicc0127ea block diagram function these products integrate a photodiode chip and an ic chip into the same package. the photodiode chip is internally connected to the ic chip as shown in the block diagram. the products should be used with terminal ro connected to an external gain resistance ro. a photocurrent is generated when a laser beam enters the photodiode. this photocurrent is fed to the input terminal of the ic a nd, after being ampli ed by the current ampli er, ows to the external gain resistance. at this time, voltages v ro at terminal ro is given by the following expression. v ro =a s p i ro [v] (1) a: current ampli er gain (s10317, s11257-02dt: 20 times, s10317-01, s11257-01dt: 6 times) s: photodiode sensitivity [a/w] (approx. 0.44 a/w at 780 nm) p i : input power [w] ro: external gain resistance [ ]; usable range 2 k to 10 k v ro is input to the internal comparator and compared with the internal reference voltage vref (approx. 0.8 v) so the output vo is ?high? when v ro < vref or ?low? when v ro > vref. in equation (1), v ro should not exceed 8 times of the voltage calculated from the threshold light level. (monitoring v ro shows that it is limited to about 2 v (with respect to gnd) by the voltage limiting circuit. keep this in mind when monitoring.)
photo ic for laser beam synchronous detection s10317/s11257 series 4 dimensional outline (unit: mm) kpica0070ed 0.66 3.2 0.2 (including burr) 3.0 * 1.0 0.4 1.0 0.4 0.05 2.4 mirror area range 0.15 2.8 2.9 3.0 * 0.45 0.3 3.0 * 3.4 mirror area range 3.8 3.9 4.0 * 4.0 * 4.2 0.2 5.0 0.3 0.45 0.3 0.35 0.75 1.3 0.8 0.8 0.8 0.1 0.1 0.8 (9 ) 0.3 (9 ) 0.4 0.5 photosensitive surface tolerance unless otherwise noted: 0.1, 2 shaded area indicates burr. chip position accuracy with respect to package dimensions marked * x, y 0.2, ? 2 packing: stick (100 pcs/stick) tape-and-reel shipment is available (s10317-30/-31) vcc nc out gnd ro gnd gnd gnd gnd photosensitive surface 2.84 0.15 center of photosensitive area 0.54 0.2 3.2 0.2 (including burr) 3.0 * 1.0 0.4 1.0 0.4 0.05 2.4 mirror area range 0.15 2.8 2.9 3.0 * 0.45 0.3 3.0 * 3.4 mirror area range 3.8 3.9 4.0 * 4.0 * 4.2 0.2 5.0 0.3 0.45 0.3 0.35 0.75 1.3 0.8 0.8 0.8 0.1 0.1 0.8 (9 ) 0.3 (9 ) 0.4 0.25 photosensitive surface tolerance unless otherwise noted: 0.1, 2 shaded area indicates burr. values in parentheses indicate reference value. chip position accuracy with respect to package dimensions marked * x, y 0.2, ? 2 packing: reel (2000 pcs/reel) vcc nc out gnd ro gnd gnd gnd gnd photosensitive surface 2.84 0.15 0.2 (0.3) center of photosensitive area s10317 series s11257 series kpica0070ed kpica0089eb
cat. no. kpic1067e04 feb. 2012 dn photo ic for laser beam synchronous detection s10317/s11257 series www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81- 733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice du e to improvements or other reasons. before assembly into fi nal products, please contact us for the delivery specification sheet to check the latest information. t ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. t he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of february, 2012. 5 recommended temperature pro le of re ow soldering (typical example) kpicb0164ea preheat time 70 to 90 s soldering time 40 s max. 190 c time te m p e ra t u re 240 c max. 220 c 170 c after unpacking, store this device in an environment at a temperature of 5 to 25 c and a humidity below 60%, and perform re ow soldering on this device within 24 hours. thermal stress applied to the device during re ow soldering differs depending on the pc boards and re ow oven being used. when setting the re ow conditions, make sure that the re ow soldering process does not degrade device reliability. a sudden temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 c per second.
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